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High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition

Li, FM and Bayer, BC and Hofmann, S and Dutson, JD and Wakeham, SJ and Thwaites, MJ and Milne, WI and Flewitt, AJ (2011) High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition. APPL PHYS LETT, 98. -. ISSN 0003-6951

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Item Type: Article
Uncontrolled Keywords: amorphous state electric breakdown electrical resistivity hafnium compounds high-k dielectric thin films optical constants permittivity short-range order sputter deposition DIELECTRIC-CONSTANT OXIDES ATOMIC LAYER DEPOSITION HFO2 THIN-FILMS ELECTRONIC-PROPERTIES TRANSPARENT TRANSISTORS TECHNOLOGY ENERGY OXYGEN PANEL
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 13:06
Last Modified: 29 Aug 2015 21:09
DOI: 10.1063/1.3601487