Li, FM and Bayer, BC and Hofmann, S and Dutson, JD and Wakeham, SJ and Thwaites, MJ and Milne, WI and Flewitt, AJ (2011) High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition. APPL PHYS LETT, 98. -. ISSN 0003-6951
Full text not available from this repository.
| Item Type: | Article |
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| Uncontrolled Keywords: | amorphous state electric breakdown electrical resistivity hafnium compounds high-k dielectric thin films optical constants permittivity short-range order sputter deposition DIELECTRIC-CONSTANT OXIDES ATOMIC LAYER DEPOSITION HFO2 THIN-FILMS ELECTRONIC-PROPERTIES TRANSPARENT TRANSISTORS TECHNOLOGY ENERGY OXYGEN PANEL |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 04 Nov 2011 15:47 |
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| Last Modified: | 17 Jun 2013 01:08 |
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| DOI: | 10.1063/1.3601487 |
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