Li, FM and Bayer, BC and Hofmann, S and Dutson, JD and Wakeham, SJ and Thwaites, MJ and Milne, WI and Flewitt, AJ (2011) High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition. APPL PHYS LETT, 98. -. ISSN 0003-6951
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|Item Type: ||Article|
|Uncontrolled Keywords: ||amorphous state electric breakdown electrical resistivity hafnium compounds high-k dielectric thin films optical constants permittivity short-range order sputter deposition DIELECTRIC-CONSTANT OXIDES ATOMIC LAYER DEPOSITION HFO2 THIN-FILMS ELECTRONIC-PROPERTIES TRANSPARENT TRANSISTORS TECHNOLOGY ENERGY OXYGEN PANEL|
|Depositing User: ||Cron Job|
|Date Deposited: ||04 Nov 2011 15:47|
|Last Modified: ||21 Oct 2013 01:09|
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