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Lateral insulated gate bipolar transistor (LIGBT) structure based on partial isolation SOI technology

Udrea, F and Milne, W and Popescu, A (1997) Lateral insulated gate bipolar transistor (LIGBT) structure based on partial isolation SOI technology. ELECTRON LETT, 33. pp. 907-909. ISSN 0013-5194

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Item Type: Article
Uncontrolled Keywords: silicon-on-insulator insulated gate bipolar transistors
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:41
Last Modified: 22 Sep 2014 01:10
DOI:

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