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A STUDY OF PULSED LASER AND MULTIPLE-SCAN ELECTRON-BEAM ANNEALING OF ARSENIC FOR N-CHANNEL MOS-TRANSISTOR SOURCE DRAIN REGIONS

GODFREY, DJ and ADAMS, AE and MCMAHON, RA and AHMED, H (1982) A STUDY OF PULSED LASER AND MULTIPLE-SCAN ELECTRON-BEAM ANNEALING OF ARSENIC FOR N-CHANNEL MOS-TRANSISTOR SOURCE DRAIN REGIONS. J ELECTROCHEM SOC, 129. C325-C325. ISSN 0013-4651

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 20:06
Last Modified: 27 Jul 2017 05:58
DOI: