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A STUDY OF PULSED LASER AND MULTIPLE-SCAN ELECTRON-BEAM ANNEALING OF ARSENIC FOR N-CHANNEL MOS-TRANSISTOR SOURCE DRAIN REGIONS

GODFREY, DJ and ADAMS, AE and MCMAHON, RA and AHMED, H (1982) A STUDY OF PULSED LASER AND MULTIPLE-SCAN ELECTRON-BEAM ANNEALING OF ARSENIC FOR N-CHANNEL MOS-TRANSISTOR SOURCE DRAIN REGIONS. J ELECTROCHEM SOC, 129. C325-C325. ISSN 0013-4651

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:51
Last Modified: 10 Mar 2014 18:02
DOI:

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