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A STUDY OF PULSED LASER AND MULTIPLE-SCAN ELECTRON-BEAM ANNEALING OF ARSENIC FOR N-CHANNEL MOS-TRANSISTOR SOURCE DRAIN REGIONS

GODFREY, DJ and ADAMS, AE and MCMAHON, RA and AHMED, H (1982) A STUDY OF PULSED LASER AND MULTIPLE-SCAN ELECTRON-BEAM ANNEALING OF ARSENIC FOR N-CHANNEL MOS-TRANSISTOR SOURCE DRAIN REGIONS. J ELECTROCHEM SOC, 129. C325-C325. ISSN 0013-4651

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 02 Sep 2016 16:43
Last Modified: 25 Sep 2016 04:18
DOI: