ROBERTSON, J and GERBER, J and SATTEL, S and WEILER, M and JUNG, K and EHRHARDT, H (1995) MECHANISM OF BIAS-ENHANCED NUCLEATION OF DIAMOND ON SI. APPL PHYS LETT, 66. pp. 3287-3289. ISSN 0003-6951
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| Item Type: | Article |
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| Uncontrolled Keywords: | CHEMICAL-VAPOR-DEPOSITION STRESS-INDUCED FORMATION SILICON GROWTH CARBON ENERGY FILMS |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 19 Jan 2012 10:12 |
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| Last Modified: | 11 Mar 2013 01:54 |
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| DOI: | |
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