ROBERTSON, J and GERBER, J and SATTEL, S and WEILER, M and JUNG, K and EHRHARDT, H (1995) MECHANISM OF BIAS-ENHANCED NUCLEATION OF DIAMOND ON SI. APPL PHYS LETT, 66. pp. 3287-3289. ISSN 0003-6951
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|Item Type: ||Article|
|Uncontrolled Keywords: ||CHEMICAL-VAPOR-DEPOSITION STRESS-INDUCED FORMATION SILICON GROWTH CARBON ENERGY FILMS|
|Depositing User: ||Cron Job|
|Date Deposited: ||19 Jan 2012 10:12|
|Last Modified: ||27 May 2013 01:18|
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