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MECHANISM OF BIAS-ENHANCED NUCLEATION OF DIAMOND ON SI

ROBERTSON, J and GERBER, J and SATTEL, S and WEILER, M and JUNG, K and EHRHARDT, H (1995) MECHANISM OF BIAS-ENHANCED NUCLEATION OF DIAMOND ON SI. APPL PHYS LETT, 66. pp. 3287-3289. ISSN 0003-6951

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Item Type: Article
Uncontrolled Keywords: CHEMICAL-VAPOR-DEPOSITION STRESS-INDUCED FORMATION SILICON GROWTH CARBON ENERGY FILMS
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:26
Last Modified: 12 Dec 2014 19:04
DOI: