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Relative importance of the Si-Si bond and Si-H bond for the stability of amorphous silicon thin film transistors

Wehrspohn, RB and Deane, SC and French, ID and Gale, I and Hewett, J and Powell, MJ and Robertson, J (2000) Relative importance of the Si-Si bond and Si-H bond for the stability of amorphous silicon thin film transistors. J APPL PHYS, 87. pp. 144-154. ISSN 0021-8979

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Item Type: Article
Uncontrolled Keywords: DEFECT-POOL MODEL DENSITY-OF-STATES BAND-TAIL TEMPERATURE-DEPENDENCE INSTABILITY MECHANISMS METASTABLE DEFECTS LOCALIZED STATES INTRINSIC STRESS HYDROGEN DEPOSITION
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:31
Last Modified: 28 Jul 2014 01:07
DOI:

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