Xiong, K and Robertson, J (2009) Electronic structure of oxygen vacancies in La2O3, Lu2O3 and LaLuO3. In: UNSPECIFIED pp. 1672-1675..
Full text not available from this repository.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|
| Uncontrolled Keywords: | High dielectric constant gate oxides Oxygen vacancy Electronic structure GATE DIELECTRICS BAND-STRUCTURE OXIDES DEVICES DEPOSITION FILMS STACK LAYER HFO2 SIO2 |
|---|
| Subjects: | UNSPECIFIED |
|---|
| Divisions: | UNSPECIFIED |
|---|
| Depositing User: | Cron Job |
|---|
| Date Deposited: | 19 Jan 2012 10:12 |
|---|
| Last Modified: | 20 May 2013 01:37 |
|---|
| DOI: | 10.1016/j.mee.2009.03.016 |
|---|
Actions (login required)
