CUED Publications database

Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs

Lu, LQ and Chen, ZY and Bryant, A and Hudgins, JL and Palmer, PR and Santi, E (2010) Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs. IEEE T IND APPL, 46. pp. 875-883. ISSN 0093-9994

Full text not available from this repository.
Item Type: Article
Uncontrolled Keywords: Compact power semiconductor device models insulated gate bipolar transistors insulated gate transistor switches power electronics power semiconductor devices semiconductor device modeling TRANSISTOR DIODE
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 18 May 2016 17:52
Last Modified: 25 Jul 2016 00:46
DOI: 10.1109/TIA.2009.2039770