Axén, N and Botton, GA and Somekh, RE and Hutchings, IM (1996) Effect of deposition conditions on the chemical bonding in sputtered carbon nitride films. Diamond and Related Materials, 5. pp. 163-168. ISSN 0925-9635Full text not available from this repository.
A balanced planar r.f. powered magnetron sputter source has been used to deposit carbon nitride films from a graphite target under various conditions. Sample temperature, bias voltage and nitrogen content in the gas mixture were varied. The effects of oxygen, methane and ammonia on the film growth were also studied. Special attention was paid to the effects of the deposition parameters on the structure of the films, in particular the hybridisation of the carbon and nitrogen bonding. The chemical bonding of the carbon and nitrogen atoms was studied by electron energy loss spectroscopy (EELS). The chemical composition was evaluated by Rutherford back-scattering. The intensity of transitions to π antibonding orbitals, as revealed by EELS, was found to increase with the nitrogen content in the films. Ion bombardment of the films during growth and the addition of oxygen or hydrogen-rich gases further increased the proportion of π bonds of both the carbon and nitrogen atoms. It is suggested that the increase in the transitions to μ antibond orbitals is to be explained by increased sp2 or possibly sp hybridisation of the carbon and nitrogen. Also, the effect of annealing on the bonding of nitrogen rich films after deposition was tested. The changes caused by nitrogen and deposition conditions are consistent with previous reports on the formation of paracyanogen structures.
|Uncontrolled Keywords:||Carbon nitride Electron energy loss spectroscopy Sputter deposition Thin films|
|Divisions:||Div E > Production Processes|
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 22:42|
|Last Modified:||05 Feb 2015 08:03|