CUED Publications database

ANNEALING BEHAVIOUR OF HIGH DOSE As** plus IMPLANTS.

Hasko, DG and McMahon, RA and Ahmed, H (1983) ANNEALING BEHAVIOUR OF HIGH DOSE As** plus IMPLANTS. Journal de Physique (Paris), Colloque, 44. pp. 223-227. ISSN 0449-1947

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Abstract

The annealing behaviour of doses up to 4. 10**1**6 ions/cm**2 implanted at ion currents up to 10ma is described. Differences between rapid isothermal and furnace annealing in the measured sheet resistances are due to different amounts of diffusion and to loss of dopant by evaporation. Implantation at high currents (10ma) does not appear to affect the quality of the regrown material provided the temperature rise during implantation is small.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:22
Last Modified: 27 Nov 2014 03:51
DOI: