Hasko, DG and McMahon, RA and Ahmed, H (1983) ANNEALING BEHAVIOUR OF HIGH DOSE As** plus IMPLANTS. Journal de Physique (Paris), Colloque, 44. pp. 223-227. ISSN 0449-1947Full text not available from this repository.
The annealing behaviour of doses up to 4. 10**1**6 ions/cm**2 implanted at ion currents up to 10ma is described. Differences between rapid isothermal and furnace annealing in the measured sheet resistances are due to different amounts of diffusion and to loss of dopant by evaporation. Implantation at high currents (10ma) does not appear to affect the quality of the regrown material provided the temperature rise during implantation is small.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||09 Dec 2016 18:02|
|Last Modified:||23 Apr 2017 02:15|