David, JR and McMahon, RA and Ahmed, H (1983) TECHNIQUES FOR PRODUCING DEFECT-FREE SOI BY DUAL ELECTRON BEAM HEATING OF DEPOSITED POLYSILICON. Journal de Physique (Paris), Colloque, 44. pp. 337-341. ISSN 0449-1947Full text not available from this repository.
Advances in the dual electron-beam recrystallization technique arising from the fast scanning of a line beam parallel to the edges of narrow seeding windows are described. The resultant recrystallized layers are essentially defect-free, have good surface flatness, and cover large areas.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||18 May 2016 18:41|
|Last Modified:||27 Jun 2016 08:30|