David, JR and McMahon, RA and Ahmed, H (1983) TECHNIQUES FOR PRODUCING DEFECT-FREE SOI BY DUAL ELECTRON BEAM HEATING OF DEPOSITED POLYSILICON. Journal de Physique (Paris), Colloque, 44. pp. 337-341. ISSN 0449-1947Full text not available from this repository.
Advances in the dual electron-beam recrystallization technique arising from the fast scanning of a line beam parallel to the edges of narrow seeding windows are described. The resultant recrystallized layers are essentially defect-free, have good surface flatness, and cover large areas.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||15 Dec 2015 12:47|
|Last Modified:||30 Apr 2016 22:50|