CUED Publications database

TECHNIQUES FOR PRODUCING DEFECT-FREE SOI BY DUAL ELECTRON BEAM HEATING OF DEPOSITED POLYSILICON.

David, JR and McMahon, RA and Ahmed, H (1983) TECHNIQUES FOR PRODUCING DEFECT-FREE SOI BY DUAL ELECTRON BEAM HEATING OF DEPOSITED POLYSILICON. Journal de Physique (Paris), Colloque, 44. pp. 337-341. ISSN 0449-1947

Full text not available from this repository.

Abstract

Advances in the dual electron-beam recrystallization technique arising from the fast scanning of a line beam parallel to the edges of narrow seeding windows are described. The resultant recrystallized layers are essentially defect-free, have good surface flatness, and cover large areas.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:22
Last Modified: 27 Nov 2014 19:24
DOI: