Peters, TB and Pitt, MB and McMahon, RA and Hasko, DG and Ahmed, H (1985) PERFORMANCE OF CMOS DEVICES IN SILICON-ON-SAPPHIRE FILMS AFTER SOLID-PHASE EPITAXIAL GROWTH WITH RAPID ELECTRON-BEAM HEATING. Electron device letters, EDL-6. pp. 482-484. ISSN 0193-8576Full text not available from this repository.
The crystal quality of 0. 3- mu m-thick as-grown epitaxial silicon-on-sapphire (SOS) was improved using solid-phase epitaxy by implantation with silicon to 10**1 **5 ions/cm**2 at 175 keV and rapid annealing using electron-beam heating. The n-channel and p-channel transistor mobilities increased by 31 and 19%, respectively, and a reduction in ring-oscillator stage delay confirmed that crystal defects near the upper silicon surface had been removed. Leakage in n-channel transistors was not significantly affected by the regrowth process but for p-channel transistors back-channel leakage was considerably greater than for the control devices. This is attributed to aluminum released by damage to the sapphire during silicon implantation.
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