Robertson, PA and Milne, WI (1986) HYDROGENATED AMORPHOUS SILICON THIN-FILM DEPOSITION BY DIRECT PHOTO-ENHANCED DECOMPOSITION OF SILANE USING AN INTERNAL HYDROGEN DISCHARGE LAMP. Materials Research Society Symposia Proceedings, 70. pp. 31-35. ISSN 0272-9172Full text not available from this repository.
Hydrogenated amorphous silicon (a-Si:H) thin films have been deposited from silane using a novel photo-enhanced decomposition technique. The system comprises a hydrogen discharge lamp contained within the reaction vessel; this unified approach allows high energy photon excitation of the silane molecules without absorption by window materials or the need for mercury sensitisation. The film growth rates (exceeding 4 Angstrom/s) and material properties obtained are comparable to those of films produced by plasma-enhanced CVD techniques. The reduction of energetic charged particles in the film growth region should enable the fabrication of cleaner semiconductor/insulator interfaces in thin-film transistors.
|Divisions:||Div B > Photonics|
|Depositing User:||Cron job|
|Date Deposited:||16 Jul 2015 13:13|
|Last Modified:||04 Oct 2015 02:43|