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RESIDUAL DEFECTS FOLLOWING RAPID ANNEALING OF BORON IMPLANTED SILICON WITH AND WITHOUT PREAMORPHISATION BY SILICON IMPLANTATION.

Hasko, DG and McMahon, RA and Ahmed, H and Stobbs, WM and Godfrey, DJ (1985) RESIDUAL DEFECTS FOLLOWING RAPID ANNEALING OF BORON IMPLANTED SILICON WITH AND WITHOUT PREAMORPHISATION BY SILICON IMPLANTATION. Institute of Physics Conference Series. pp. 99-104. ISSN 0373-0751

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:53
Last Modified: 25 Jul 2017 05:41
DOI: