Hasko, DG and McMahon, RA and Ahmed, H and Stobbs, WM and Godfrey, DJ (1985) RESIDUAL DEFECTS FOLLOWING RAPID ANNEALING OF BORON IMPLANTED SILICON WITH AND WITHOUT PREAMORPHISATION BY SILICON IMPLANTATION. Institute of Physics Conference Series. pp. 99-104. ISSN 0373-0751Full text not available from this repository.
Implants of boron into silicon which has been made amorphous by silicon implantation have a shallower depth profile than the same implants into silicon. This results in higher activation and restricted diffusion of the B implants after annealing, and there are also significant differences in the microstructure after annealing compared with B implants into silicon. Rapid isothermal heating with an electron beam and furnace treatments are used to characterize the defect structure as a function of time and temperature. Defects are seen to influence the diffusion of non-substitutional boron.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron job|
|Date Deposited:||16 Jul 2015 14:14|
|Last Modified:||27 Nov 2015 10:12|