CUED Publications database

Formation of silicon-on-insulator layers by electron beam recrystallization

McMahon, RA (1988) Formation of silicon-on-insulator layers by electron beam recrystallization. Microelectronic Engineering, 8. pp. 255-272. ISSN 0167-9317

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This paper outlines the development of the electron beam recrystallization approach to the formation of silicon-on-insulator layers. The technique of recrystallizing seeded layers by a line electron beam has been widely adopted. Present practice in electron beam recrystallization is reviewed, both from materials and process points of view. Applications of silicon-on-insulator substrates formed in this way are described, particularly in three-dimensional integration. © 1988.

Item Type: Article
Uncontrolled Keywords: electron beam recrystallization Silicon-on-insulator
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron job
Date Deposited: 16 Jul 2015 13:40
Last Modified: 26 Nov 2015 11:33
DOI: 10.1016/0167-9317(88)90020-2