McMahon, RA (1988) Formation of silicon-on-insulator layers by electron beam recrystallization. Microelectronic Engineering, 8. pp. 255-272. ISSN 0167-9317Full text not available from this repository.
This paper outlines the development of the electron beam recrystallization approach to the formation of silicon-on-insulator layers. The technique of recrystallizing seeded layers by a line electron beam has been widely adopted. Present practice in electron beam recrystallization is reviewed, both from materials and process points of view. Applications of silicon-on-insulator substrates formed in this way are described, particularly in three-dimensional integration. © 1988.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||18 May 2016 19:05|
|Last Modified:||26 May 2016 23:35|