CUED Publications database

Materials and devices toward three-dimensional integration

Dunne, B and O'Flanagan, S and Hobbs, L and Cahill, CG and Mathewson, A and Lane, WA and Montier, M and Chapuis, D and Gris, Y and Karapiperis, L and Garry, G and Dieumegard, D and Regolini, JL and Bensahel, D and Mermet, JL and Bono, H and Achard, H and Joly, JP and Barfoot, KM and Field, M and Hopper, GF and Godfrey, DJ and Timans, PJ and Smith, D and Williams, DA and McMahon, RA and Ahmed, H (1988) Materials and devices toward three-dimensional integration. Microelectronic Engineering, 8. pp. 235-253. ISSN 0167-9317

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Abstract

It has been shown that the apparent benefits of a two-layer stacked SOI system, i.e. packing density and speed improvements, are less than could be expected in the context of a VLSI requirement [1]. In this project the stacked SOI system has been identified as having major application in the realization of integrated, mixed technology systems. Zone-melting-recrystallization (ZMR) with lasers and electron beams have been used to produce device quality SOI material and a small test-bed circuit has been designed as a demonstration of the feasibility of this approach. © 1988.

Item Type: Article
Uncontrolled Keywords: electron beam laser LDMOS Recrystallization ZMR smart-power three-dimensional integration
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 04 Feb 2015 22:42
Last Modified: 01 May 2015 19:06
DOI: 10.1016/0167-9317(88)90019-6