Dunne, B and O'Flanagan, S and Hobbs, L and Cahill, CG and Mathewson, A and Lane, WA and Montier, M and Chapuis, D and Gris, Y and Karapiperis, L and Garry, G and Dieumegard, D and Regolini, JL and Bensahel, D and Mermet, JL and Bono, H and Achard, H and Joly, JP and Barfoot, KM and Field, M and Hopper, GF and Godfrey, DJ and Timans, PJ and Smith, D and Williams, DA and McMahon, RA and Ahmed, H (1988) Materials and devices toward three-dimensional integration. Microelectronic Engineering, 8. pp. 235-253. ISSN 0167-9317Full text not available from this repository.
It has been shown that the apparent benefits of a two-layer stacked SOI system, i.e. packing density and speed improvements, are less than could be expected in the context of a VLSI requirement . In this project the stacked SOI system has been identified as having major application in the realization of integrated, mixed technology systems. Zone-melting-recrystallization (ZMR) with lasers and electron beams have been used to produce device quality SOI material and a small test-bed circuit has been designed as a demonstration of the feasibility of this approach. © 1988.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||09 Dec 2016 18:02|
|Last Modified:||27 Feb 2017 05:00|