CUED Publications database

Unified circuit model for the polysilicon TFT

Izzard, MJ and Migliorato, P and Milne, WI (1990) Unified circuit model for the polysilicon TFT. Conference on Solid State Devices and Materials. pp. 1193-1194.

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Abstract

This paper proposes two methods to improve the modelling of thin film transistors (TFTs). The first involves integrating Poissons equation numerically, given a density of trap states and other relevant material parameters including a constant mobility. Theresult is conductance as a numerical function of gate voltage. The second method recognizes that the data for areal conductance found by numerical integration, may easily be found by measurement without making assumptions about the density of trap states.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:11
Last Modified: 27 Nov 2014 19:24
DOI: