Izzard, MJ and Migliorato, P and Milne, WI (1990) Unified circuit model for the polysilicon TFT. Conference on Solid State Devices and Materials. pp. 1193-1194.Full text not available from this repository.
This paper proposes two methods to improve the modelling of thin film transistors (TFTs). The first involves integrating Poissons equation numerically, given a density of trap states and other relevant material parameters including a constant mobility. Theresult is conductance as a numerical function of gate voltage. The second method recognizes that the data for areal conductance found by numerical integration, may easily be found by measurement without making assumptions about the density of trap states.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||15 Dec 2015 12:47|
|Last Modified:||29 Apr 2016 04:31|