Huang, Q and Sankara Narayanan, EM and Kwan, KW and Amaratunga, G and Milne, WI (1990) A novel heavily doped drift-auxiliary cathode lateral insulated gate transistor structure. pp. 102-107.
Full text not available from this repository.| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Cron Job |
| Date Deposited: | 20 Dec 2011 12:10 |
| Last Modified: | 30 Jan 2012 01:10 |
| DOI: |
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