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A novel heavily doped drift-auxiliary cathode lateral insulated gate transistor structure

Huang, Q and Sankara Narayanan, EM and Kwan, KW and Amaratunga, G and Milne, WI (1990) A novel heavily doped drift-auxiliary cathode lateral insulated gate transistor structure. pp. 102-107.

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:09
Last Modified: 17 Mar 2014 14:32
DOI:

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