Izzard, MJ and Migliorato, P and Milne, WI (1991) A unified circuit model for the polysilicon thin film transistor. Japanese Journal of Applied Physics, 30. L170-L171. ISSN 0021-4922Full text not available from this repository.
This paper describes a unified approach to modelling the polysilicon thin film transistor (TFT) for the purposes of circuit design. The approach uses accurate methods of predicting the channel conductance and then fitting the resulting data with a polynomial. Two methods are proposed to find the channel conductance: a device model and measurement. The approach is suitable because the TFT does not have a well defined threshold voltage. The polynomial conductance is then integrated generally to find the drain current and channel charge, necessary for a complete circuit model. © 1991 The Japan Society of Applied Physics.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||15 Dec 2015 12:47|
|Last Modified:||02 May 2016 06:13|