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Correlation between density of states distributions and the fermi level position in interfacial regions of amorphous silicon thin film transistors

Deane, SC and Milne, WI (1990) Correlation between density of states distributions and the fermi level position in interfacial regions of amorphous silicon thin film transistors. Conference on Solid State Devices and Materials. pp. 1031-1034.

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Abstract

This paper investigates the variation of the integrated density of states with conduction activation energy in hydrogenated amorphous silicon thin film transistors. Results are given for two different gate insulator layers, PECVD silicon oxide and thermally grown silicon dioxide. The different gate insulators produce transistors with very different initial transfer characteristics, but the variation of integrated density of states with conduction activation energy is shown to be similar.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:43
Last Modified: 27 Nov 2014 19:24
DOI: