Chen, Y and Ekkanath Madathil, SN and Clough, FJ and Milne, WI (1995) Influence of lattice temperature on SOI MOSFET's output characteristics. IEE Colloquium (Digest). 8/1-8/4. ISSN 0963-3308Full text not available from this repository.
An explanation for the observed variations in the output behaviour of SOI transistors with different buried oxide thicknesses is presented. At low drain bias, the temperature effects are relatively insignificant while at high drain bias, the temperature effects dominate the nonlinear behaviour of the output characteristics.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||15 Dec 2015 12:47|
|Last Modified:||13 Feb 2016 04:49|