Palmer, PR and Hinchley, DA and Stark, BH (1998) MOS and bipolar gated thyristor: A thyristor with IGBT switching characteristics. IEE Proceedings: Circuits, Devices and Systems, 145. pp. 105-110. ISSN 1350-2409Full text not available from this repository.
The IGBT has become the device of choice in many high-voltage-power electronic applications, by virtue of combining the ease of MOS gate control with an acceptable forward voltage drop. However, designers have retained an interest in MOS gated thyristor structures which have a turn-off capability. These offer low on-state losses as a result of their latching behaviour. Recently, there have been various proposals for dual-gate devices that have a thyristor on-state with IGBT-like switching. Many of these dual gated structures rely on advanced MOS technology, with inherent manufacturing difficulties. The MOS and bipolar gated thyristor offers all the advantages of dual gated performance, while employing standard IGBT processing techniques. The paper describes the MBGT in detail, and presents experimental and simulation results for devices based on realistic commercial processes. It is shown that the MBGT represents a viable power semiconductor device technology, suitable for a diverse range of applications. © IEE, 1998.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||09 Dec 2016 18:15|
|Last Modified:||26 Mar 2017 22:59|