Qian, YH and Owen, M and Ke, ML and Qiu, BC and McDougall, SD and Kowalski, OP and Hamilton, CJ and Bryce, AC and Marsh, JH and Wilkinson, CDW and Penty, RV and White, IH and Perrin, S and Rogers, D and Robertson, M (1998) Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2. pp. 194-195. ISSN 1092-8081Full text not available from this repository.
Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.
|Divisions:||Div B > Photonics|
|Depositing User:||Cron Job|
|Date Deposited:||15 Dec 2015 12:46|
|Last Modified:||10 Feb 2016 05:09|