Aschenbeck, J and Chen, Y and Clough, F and Xu, YZ and Narayanan, EMS and Milne, WI (1999) Stepped gate polysilicon thin film transistor for large area power applications. Materials Research Society Symposium - Proceedings, 507. pp. 25-30. ISSN 0272-9172Full text not available from this repository.
For the first time, we report a new poly-Si stepped gate Thin Film Transistor (SG TFT) on glass. The Density of States extracted from measured I-V characteristics has been used to evaluate the device performance with a two dimensional device simulator. The results show that the three-terminal SG TFT device has a switching speed comparable to a low voltage structure and the high on-current capability of a metal field plate (MFP) TFT and the potential for comparable breakdown characteristics.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||09 Dec 2016 18:45|
|Last Modified:||21 Jan 2017 22:45|