Qian, YH and Owen, M and Bryce, AC and Marsh, JH and Wilkinson, CDW and Penty, RV and White, IH and Perrin, S and Rogers, D and Robertson, M (1999) Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. pp. 103-106. ISSN 1092-8669Full text not available from this repository.
We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.
|Divisions:||Div B > Photonics|
|Depositing User:||Cron Job|
|Date Deposited:||15 Dec 2015 12:46|
|Last Modified:||08 Feb 2016 03:11|