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Theoretical and numerical investigation of SiC JFET and MOSFET at 6.5 kV

Mihaila, A and Udrea, F and Azar, R and Liang, J and Amaratunga, G and Rusu, A and Brezeanu, G (1999) Theoretical and numerical investigation of SiC JFET and MOSFET at 6.5 kV. Proceedings of the International Semiconductor Conference, CAS, 1. pp. 191-194.

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:09
Last Modified: 17 Mar 2014 01:23
DOI:

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