Milne, WI and Maeng, SL and Kleinsorge, B and Uchikoga, S and Robertson, J (1999) Amorphous carbon for use in thin film transistors. Proceedings of the International Semiconductor Conference, CAS, 1. pp. 11-16.Full text not available from this repository.
Tetrahedrally bonded amorphous carbon (ta-C) is a new type of semiconducting thin film material. It can be produced at room temperature using the Filtered Cathodic Vacuum Arc technique. The as-grown undoped ta-C is p-type in nature but it can be n-doped by the addition of nitrogen during deposition. This paper will describe thin film transistor design and fabrication using ta-C as the active channel layer.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||15 Dec 2015 12:46|
|Last Modified:||07 Feb 2016 01:49|