CUED Publications database

Amorphous carbon for use in thin film transistors

Milne, WI and Maeng, SL and Kleinsorge, B and Uchikoga, S and Robertson, J (1999) Amorphous carbon for use in thin film transistors. Proceedings of the International Semiconductor Conference, CAS, 1. pp. 11-16.

Full text not available from this repository.


Tetrahedrally bonded amorphous carbon (ta-C) is a new type of semiconducting thin film material. It can be produced at room temperature using the Filtered Cathodic Vacuum Arc technique. The as-grown undoped ta-C is p-type in nature but it can be n-doped by the addition of nitrogen during deposition. This paper will describe thin film transistor design and fabrication using ta-C as the active channel layer.

Item Type: Article
Depositing User: Cron job
Date Deposited: 16 Jul 2015 13:14
Last Modified: 26 Nov 2015 11:10