CUED Publications database

Amorphous carbon for use in thin film transistors

Milne, WI and Maeng, SL and Kleinsorge, B and Uchikoga, S and Robertson, J (1999) Amorphous carbon for use in thin film transistors. Proceedings of the International Semiconductor Conference, CAS, 1. pp. 11-16.

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Abstract

Tetrahedrally bonded amorphous carbon (ta-C) is a new type of semiconducting thin film material. It can be produced at room temperature using the Filtered Cathodic Vacuum Arc technique. The as-grown undoped ta-C is p-type in nature but it can be n-doped by the addition of nitrogen during deposition. This paper will describe thin film transistor design and fabrication using ta-C as the active channel layer.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 18 May 2016 19:09
Last Modified: 26 May 2016 04:17
DOI: