Maeng, SL and Uchikoga, S and Clough, FJ and Tagliaferro, A and Flewitt, AJ and Robertson, J and Milne, WI (2000) Carbon based bottom gate thin film transistor. Diamond and Related Materials, 9. pp. 805-810. ISSN 0925-9635Full text not available from this repository.
This paper describes the fabrication and characterization of a carbon based, bottom gate, thin film transistor (TFT). The active layer is formed from highly sp2 bonded nitrogenated amorphous carbon (a-C:N) which is deposited at room temperature using a filtered cathodic vacuum arc technique. The TFT shows p-channel operation. The device exhibits a threshold voltage of 15 V and a field effect mobility of 10-4 cm2 V-1 s-1 . The valence band tail of a-C:N is observed to be much shallower than that of a-Si:H, but does not appear to severely impede the shift of the Fermi level. This may indicate that a significant proportion of the a-C tail states can still contribute to conduction.
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|Date Deposited:||04 Feb 2015 22:28|
|Last Modified:||12 Feb 2015 01:19|