Flewitt, AJ and Dyson, AP and Robertson, J and Milne, WI (2000) Hydrogenated amorphous silicon and silicon nitride deposited at less than 100° C by ECR-PECVD for thin film transistors. Materials Research Society Symposium - Proceedings, 609. A2821-A2826. ISSN 0272-9172
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|Item Type: ||Article|
|Depositing User: ||Cron Job|
|Date Deposited: ||20 Dec 2011 12:10|
|Last Modified: ||13 Feb 2012 01:30|
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