Flewitt, AJ and Dyson, AP and Robertson, J and Milne, WI (2000) Hydrogenated amorphous silicon and silicon nitride deposited at less than 100° C by ECR-PECVD for thin film transistors. Materials Research Society Symposium - Proceedings, 609. A2821-A2826. ISSN 0272-9172
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| Item Type: | Article |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 20 Dec 2011 12:10 |
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| Last Modified: | 13 Feb 2012 01:30 |
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| DOI: | |
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