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Hydrogenated amorphous silicon and silicon nitride deposited at less than 100° C by ECR-PECVD for thin film transistors

Flewitt, AJ and Dyson, AP and Robertson, J and Milne, WI (2000) Hydrogenated amorphous silicon and silicon nitride deposited at less than 100° C by ECR-PECVD for thin film transistors. Materials Research Society Symposium - Proceedings, 609. A2821-A2826. ISSN 0272-9172

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:37
Last Modified: 06 Oct 2014 01:24
DOI: