CUED Publications database

Analytical model for the 3D-RESURF effect

Ng, R and Udrea, F and Amaratunga, G (2000) Analytical model for the 3D-RESURF effect. Solid-State Electronics, 44. pp. 1753-1764. ISSN 0038-1101

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This paper presents an analytical model for the determination of the basic breakdown properties of three-dimensional (3D)-RESURF/CoolMOS/super junction type structures. To account for the two-dimensional (2D) effect of the 3D-RESURF action, 2D models of the electric field distribution are developed. Based on these, expressions are derived for the breakdown voltage as a function of doping concentration and physical dimensions. In addition to cases where the drift regions are fully depleted, the model developed is also applicable to situations involving drift regions which are almost depleted. Accuracy of the analytical approach is verified by comparison with numerical results obtained from the MEDICI device simulator.

Item Type: Article
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:36
Last Modified: 18 Feb 2021 15:23
DOI: 10.1016/S0038-1101(00)00133-7