Ng, R and Udrea, F and Amaratunga, G (2000) Analytical model for the 3D-RESURF effect. Solid-State Electronics, 44. pp. 1753-1764. ISSN 0038-1101Full text not available from this repository.
This paper presents an analytical model for the determination of the basic breakdown properties of three-dimensional (3D)-RESURF/CoolMOS/super junction type structures. To account for the two-dimensional (2D) effect of the 3D-RESURF action, 2D models of the electric field distribution are developed. Based on these, expressions are derived for the breakdown voltage as a function of doping concentration and physical dimensions. In addition to cases where the drift regions are fully depleted, the model developed is also applicable to situations involving drift regions which are almost depleted. Accuracy of the analytical approach is verified by comparison with numerical results obtained from the MEDICI device simulator.
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|Date Deposited:||04 Feb 2015 23:03|
|Last Modified:||05 Feb 2015 01:21|