Flier, C and White, IH and Kuball, M and Heard, PJ and Allen, GG and Marinelli, C and Rorison, JM and Penty, RV and Chen, Y and Wang, SY (1999) Focused ion beam etching of GaN. MRS Internet Journal of Nitride Semiconductor Research, 4. ISSN 1092-5783Full text not available from this repository.
We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching - a well-established technique for optical mask repair and for IC failure analysis and repair - without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5×10 -4μm3/pC. At a current of 3nA, for example, this corresponds to an etch rate of 1.05μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1μm. Changes in the roughness of the etched surface plane stay below 8nm.
|Divisions:||Div B > Photonics|
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||15 Dec 2015 12:44|
|Last Modified:||07 Feb 2016 23:12|