Baptista, DL and Lopes, JMJ and Morschbacher, MJ and Dalal, SH and Oei, SP and Teo, KBK and Milne, WI and Zawislak, FC (2007) Vertically aligned carbon nanotubes growth using self-assembled Ni nanoparticles produced by ion implantation. Materials Research Society Symposium Proceedings, 960. pp. 112-117. ISSN 0272-9172Full text not available from this repository.
An alternative method for seeding catalyst nanoparticles for carbon nanotubes and nanowires growth is presented. Ni nanoparticles are formed inside a 450 nm SiO 2 film on (100) Si wafers through the implantation of Ni ions at fluences of 7.5×10 15 and 1.7×10 16 ions.cm -2 and post-annealing treatments at 700, 900 and 1100°C. After exposed to the surface by HF dip etching, the Ni nanoparticles are used as catalyst for the growth of vertically aligned carbon nanotubes by direct current plasma enhanced chemical vapor deposition. © 2007 Materials Research Society.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:43|
|Last Modified:||27 Nov 2014 19:21|