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How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD?

Lee, CH and Lee, CH and Sazonov, A and Robertson, J and Nathan, A and Nathan, A and Esmaeili-Rad, MR and Servati, P and Milne, WI (2006) How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD? Technical Digest - International Electron Devices Meeting, IEDM. ISSN 0163-1918

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Abstract

CMOS nanocrystalline silicon thin film transistors with high field effect mobility are reported. The transistors were directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150°C The transistors show maximum field effect mobility of 450 cm2/V-s for electrons and 100 cm2/V-s for holes at room temperature. We attribute the high mobilities to a reduction of the oxygen content, which acts as an accidental donor. Indeed, secondary ion mass spectrometry measurements show that the impurity concentration in the nanocrystalline Si layer is comparable to, or lower than, the defect density in the material, which is already low thanks to hydrogen passivation.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 16 Jul 2015 13:14
Last Modified: 29 Jul 2015 01:58
DOI: 10.1109/IEDM.2006.346766