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How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD?

Lee, CH and Sazonov, A and Robertson, J and Nathan, A and Esmaeili-Rad, MR and Servati, P and Milne, WI (2006) How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD? Technical Digest - International Electron Devices Meeting, IEDM. ISSN 0163-1918

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:38
Last Modified: 18 Jul 2017 09:44
DOI: