Lee, C-H and Sazonov, A and Robertson, J and Nathan, A and Esmaeili-Rad, MR and Servati, P and Milne, WI (2006) How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD? Technical Digest - International Electron Devices Meeting, IEDM. ISSN 0163-1918
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|Item Type: ||Article|
|Depositing User: ||Cron Job|
|Date Deposited: ||20 Dec 2011 12:10|
|Last Modified: ||20 May 2013 01:40|
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