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How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD?

Lee, C-H and Sazonov, A and Robertson, J and Nathan, A and Esmaeili-Rad, MR and Servati, P and Milne, WI (2006) How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD? Technical Digest - International Electron Devices Meeting, IEDM. ISSN 0163-1918

Full text not available from this repository.
Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:11
Last Modified: 13 Oct 2014 01:12
DOI: