Lee, CH and Lee, CH and Sazonov, A and Robertson, J and Nathan, A and Nathan, A and Esmaeili-Rad, MR and Servati, P and Milne, WI (2006) How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD? Technical Digest - International Electron Devices Meeting, IEDM. ISSN 0163-1918Full text not available from this repository.
CMOS nanocrystalline silicon thin film transistors with high field effect mobility are reported. The transistors were directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150°C The transistors show maximum field effect mobility of 450 cm2/V-s for electrons and 100 cm2/V-s for holes at room temperature. We attribute the high mobilities to a reduction of the oxygen content, which acts as an accidental donor. Indeed, secondary ion mass spectrometry measurements show that the impurity concentration in the nanocrystalline Si layer is comparable to, or lower than, the defect density in the material, which is already low thanks to hydrogen passivation.
|Depositing User:||Cron job|
|Date Deposited:||16 Jul 2015 13:14|
|Last Modified:||05 Sep 2015 02:35|