Skorupa, W and Yankov, RA and Voelskow, M and Anwand, W and Panknin, D and McMahon, RA and Smith, M and Gebel, T and Rebohle, L and Fendler, R and Hentsch, W (2005) Advanced thermal processing of semiconductor materials in the msec-range. 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005. pp. 53-71.Full text not available from this repository.
This paper reviews the advances that flash lamp annealing brings to the processing of the most frequently used semiconductor materials, namely silicon and silicon carbide, thus enabling the fabrication of novel microelectronic structures and materials. The paper describes how such developments can translate into important practical applications leading to a wide range of technological benefits. Opportunities in ultra-shallow junction formation, heteroepitaxial growth of thin films of cubic silicon carbide on silicon, and crystallization of amorphous silicon films, along with the technical reasons for using flash lamp annealing are discussed in the context of state-of-the-art materials processing. © 2005 IEEE.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:15|
|Last Modified:||27 Nov 2014 19:20|