CUED Publications database

Modeling of MOS-side carrier injection in trench-gate IGBTs

Lu, L and Chen, Z and Bryant, A and Santi, E and Hudgins, JL and Palmer, PR (2007) Modeling of MOS-side carrier injection in trench-gate IGBTs. In: UNSPECIFIED pp. 342-349..

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Abstract

A compact trench-gate IGBT model that captures MOS-side carrier injection is developed. The model retains the simplicity of a one-dimensional solution to the ambipolar diffusion equation, but at the same time captures MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms. © 2007 IEEE.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:15
Last Modified: 27 Nov 2014 19:20
DOI: