Lu, L and Chen, Z and Bryant, A and Santi, E and Hudgins, JL and Palmer, PR (2007) Modeling of MOS-side carrier injection in trench-gate IGBTs. In: UNSPECIFIED pp. 342-349..Full text not available from this repository.
A compact trench-gate IGBT model that captures MOS-side carrier injection is developed. The model retains the simplicity of a one-dimensional solution to the ambipolar diffusion equation, but at the same time captures MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms. © 2007 IEEE.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Unnamed user with email email@example.com|
|Date Deposited:||18 May 2016 18:26|
|Last Modified:||25 Jul 2016 00:46|