Stark, BH and Palmer, PR (1999) Switching aspects of hybrid semiconductor power devices. In: UNSPECIFIED 14/1-14/4..Full text not available from this repository.
A hybrid semiconductor power device has been designed which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between an IGBT and a thyristor mode of operation. This paper discusses aspects of the switching behaviour of this and of similar devices. Simulation results of an example structure are presented and conceivable developments in the switching characteristics of hybrid devices are discussed.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||18 May 2016 18:26|
|Last Modified:||27 May 2016 22:50|