CUED Publications database

Single-gated multiple-mode power semiconductor devices

Stark, BH and Palmer, PR (1999) Single-gated multiple-mode power semiconductor devices. In: UNSPECIFIED pp. 21-24..

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A new method has been used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. This paper discusses single-gated devices with multiple modes and aspects of their switching behaviour.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:47
Last Modified: 07 Mar 2019 17:00