Stark, BH and Palmer, PR (1999) Single-gated multiple-mode power semiconductor devices. In: UNSPECIFIED pp. 21-24..Full text not available from this repository.
A new method has been used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. This paper discusses single-gated devices with multiple modes and aspects of their switching behaviour.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||09 Dec 2016 18:15|
|Last Modified:||11 Dec 2016 01:16|