Santra, S and Guha, PK and Ali, SZ and Haneef, I and Udrea, F and Gardner, JW (2008) SOI diode temperature sensor operated at ultra high temperatures-a critical analysis. Proceedings of IEEE Sensors. pp. 78-81.Full text not available from this repository.
This paper investigates the performance of diode temperature sensors when operated at ultra high temperatures (above 250°C). A low leakage Silicon On Insulator (SOI) diode was designed and fabricated in a 1 μm CMOS process and suspended within a dielectric membrane for efficient thermal insulation. The diode can be used for accurate temperature monitoring in a variety of sensors such as microcalorimeters, IR detectors, or thermal flow sensors. A CMOS compatible micro-heater was integrated with the diode for local heating. It was found that the diode forward voltage exhibited a linear dependence on temperature as long as the reverse saturation current remained below the forward driving current. We have proven experimentally that the maximum temperature can be as high as 550°C. Long term continuous operation at high temperatures (400°C) showed good stability of the voltage drop. Furthermore, we carried out a detailed theoretical analysis to determine the maximum operating temperature and exlain the presence of nonlinearity factors at ultra high temperatures. © 2008 IEEE.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
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|Date Deposited:||09 Dec 2016 18:08|
|Last Modified:||22 Mar 2017 23:58|