CUED Publications database

Spice modelling of the superjunction IGBT

Antoniou, M and Udrea, F and Bauer, F (2008) Spice modelling of the superjunction IGBT. In: UNSPECIFIED.

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Abstract

This paper presents a SPICE model of the SuperJunction Insulated Gate Bipolar Transistor (SJIGBT) [1]. SPICE simulation results are in good agreement with the DESSIS simulation results under DC conditions. This model consists of an intrinsic MOSFET and a parallel combination of a wide and a narrow base pnp BJTs. A parasitic JFET is also included to account for the restricted current flow between two adjacent p-wells. In addition the JFET component also models the additional depletion region caused by the transverse junction at the upper side of the n-drift region where the current is mainly transported via majority carriers.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 15 Dec 2015 12:44
Last Modified: 29 Apr 2016 03:21
DOI: 10.1049/ic:20080210