CUED Publications database

Spice modelling of the superjunction IGBT

Antoniou, M and Udrea, F and Bauer, F (2008) Spice modelling of the superjunction IGBT. In: UNSPECIFIED.

Full text not available from this repository.

Abstract

This paper presents a SPICE model of the SuperJunction Insulated Gate Bipolar Transistor (SJIGBT) [1]. SPICE simulation results are in good agreement with the DESSIS simulation results under DC conditions. This model consists of an intrinsic MOSFET and a parallel combination of a wide and a narrow base pnp BJTs. A parasitic JFET is also included to account for the restricted current flow between two adjacent p-wells. In addition the JFET component also models the additional depletion region caused by the transverse junction at the upper side of the n-drift region where the current is mainly transported via majority carriers.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: Fieldstop IGBT SPICE modelling SuperJunction
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:08
Last Modified: 27 Nov 2014 19:20
DOI: 10.1049/ic:20080210