Antoniou, M and Udrea, F and Bauer, F (2008) Spice modelling of the superjunction IGBT. In: UNSPECIFIED.Full text not available from this repository.
This paper presents a SPICE model of the SuperJunction Insulated Gate Bipolar Transistor (SJIGBT) . SPICE simulation results are in good agreement with the DESSIS simulation results under DC conditions. This model consists of an intrinsic MOSFET and a parallel combination of a wide and a narrow base pnp BJTs. A parasitic JFET is also included to account for the restricted current flow between two adjacent p-wells. In addition the JFET component also models the additional depletion region caused by the transverse junction at the upper side of the n-drift region where the current is mainly transported via majority carriers.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||15 Dec 2015 12:44|
|Last Modified:||10 Feb 2016 03:25|