CUED Publications database

Laminar to turbulent flow transition measurements using an array of SOI-CMOS MEMS wall shear stress sensors

Haneef, I and Coull, JD and Ali, SZ and Udrea, F and Hodson, HP (2008) Laminar to turbulent flow transition measurements using an array of SOI-CMOS MEMS wall shear stress sensors. Proceedings of IEEE Sensors. pp. 57-61.

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Abstract

The successful utilization of an array of silicon on insulator complementary metal oxide semiconductor (SOICMOS) micro thermal shear stress sensors for flow measurements at macro-scale is demonstrated. The sensors use CMOS aluminum metallization as the sensing material and are embedded in low thermal conductivity silicon oxide membranes. They have been fabricated using a commercial 1 μm SOI-CMOS process and a post-CMOS DRIE back etch. The sensors with two different sizes were evaluated. The small sensors (18.5 ×18.5 μm2 sensing area on 266 × 266 μm2 oxide membrane) have an ultra low power (100 °C temperature rise at 6mW) and a small time constant of only 5.46 μs which corresponds to a cut-off frequency of 122 kHz. The large sensors (130 × 130 μm2 sensing area on 500 × 500 μm2 membrane) have a time constant of 9.82 μs (cut-off frequency of 67.9 kHz). The sensors' performance has proven to be robust under transonic and supersonic flow conditions. Also, they have successfully identified laminar, separated, transitional and turbulent boundary layers in a low speed flow. © 2008 IEEE.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div A > Turbomachinery
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 16 Jul 2015 14:10
Last Modified: 30 Jul 2015 23:22
DOI: 10.1109/ICSENS.2008.4716382