Bawedin, M and Cristoloveanu, S and Flandre, D and Udrea, F (2009) Floating-body SOI memory: Concepts, physics and challenges. ECS Transactions, 19. pp. 243-256. ISSN 1938-5862Full text not available from this repository.
We present an overview of the single-transistor memory cells (lT-DRAMs), which are based on floating-body effects in SOI MOSFETs. The typical device architectures, principles of operation and key mechanisms for programming are described. The various approaches (Z-RAM, MSDRAM, etc) are compared in terms of performance and potential for aggressive scaling. ©The Electrochemical Society.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||15 Dec 2015 13:35|
|Last Modified:||02 May 2016 12:17|