CUED Publications database

Floating-body SOI memory: Concepts, physics and challenges

Bawedin, M and Cristoloveanu, S and Flandre, D and Udrea, F (2009) Floating-body SOI memory: Concepts, physics and challenges. ECS Transactions, 19. pp. 243-256. ISSN 1938-5862

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Abstract

We present an overview of the single-transistor memory cells (lT-DRAMs), which are based on floating-body effects in SOI MOSFETs. The typical device architectures, principles of operation and key mechanisms for programming are described. The various approaches (Z-RAM, MSDRAM, etc) are compared in terms of performance and potential for aggressive scaling. ©The Electrochemical Society.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:21
Last Modified: 08 Dec 2014 02:23
DOI: 10.1149/1.3117415