CUED Publications database

Floating-body SOI memory: Concepts, physics and challenges

Bawedin, M and Cristoloveanu, S and Flandre, D and Udrea, F (2009) Floating-body SOI memory: Concepts, physics and challenges. ECS Transactions, 19. pp. 243-256. ISSN 1938-5862

Full text not available from this repository.


We present an overview of the single-transistor memory cells (lT-DRAMs), which are based on floating-body effects in SOI MOSFETs. The typical device architectures, principles of operation and key mechanisms for programming are described. The various approaches (Z-RAM, MSDRAM, etc) are compared in terms of performance and potential for aggressive scaling. ©The Electrochemical Society.

Item Type: Article
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Unnamed user with email
Date Deposited: 02 Sep 2016 17:16
Last Modified: 21 Oct 2016 23:07