Bryant, AT and Jennings, MR and Parker-Allotey, NA and Mawby, PA and Perez-Tomas, A and Brosselard, P and Godignon, P and Jorda, X and Millan, J and Palmer, PR and Santi, E and Hudgins, JL (2009) Physical modelling of large area 4H-SiC PiN diodes. In: UNSPECIFIED pp. 986-993..Full text not available from this repository.
The recent developments in SiC PiN diode research mean that physics-based models that allow accurate, rapid prediction of switching and conduction performance and resulting converter losses will soon be required. This is especially the case given the potential for very high voltage converters to be used for enabling distributed and renewable power generation. In this work an electro-thermal compact model of a 4.5 kV silicon carbide PiN diode has been developed for converter loss modelling in Simulink. Good matching of reverse recovery has been achieved between 25 and 200 °C. The I-V characteristics of the P+ anode contact have been shown to be significant in obtaining good matching for the forward characteristics of the diode, requiring further modelling work in this area. © 2009 IEEE.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Uncontrolled Keywords:||Contact resistance Electro-thermal model PiN diode Silicon carbide|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||16 Jul 2015 13:24|
|Last Modified:||28 Nov 2015 09:32|