CUED Publications database

Improved infrared thermal imaging of a CMOS MEMS device

Hopper, RH and Haneef, I and Ali, SZ and Udrea, F and Oxley, CH (2010) Improved infrared thermal imaging of a CMOS MEMS device. 16th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2010. pp. 122-126.

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We report a technique which can be used to improve the accuracy of infrared (IR) surface temperature measurements made on MEMS (Micro-Electro-Mechanical- Systems) devices. The technique was used to thermally characterize a SOI (Silicon-On-Insulator) CMOS (Complementary Metal Oxide Semiconductor) MEMS thermal flow sensor. Conventional IR temperature measurements made on the sensor were shown to give significant surface temperature errors, due to the optical transparency of the SiO membrane layers and low emissivity/high reflectivity of the metal. By making IR measurements on radiative carbon micro-particles placed in isothermal contact with the device, the accuracy of the surface temperature measurement was significantly improved. © 2010 EDA Publishing/THERMINIC. 2

Item Type: Article
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:46
Last Modified: 13 Apr 2021 07:35