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Deposition and characterisation of ultralow-stress ZnO thin films for application in FBAR-based gravimetric biosensors

García-Gancedo, L and Ashley, GM and Zhao, XB and Pedrós, J and Flewitt, AJ and Milne, WI and Luo, JK and Lu, JR and Ford, CJB and Zhang, D (2011) Deposition and characterisation of ultralow-stress ZnO thin films for application in FBAR-based gravimetric biosensors. International Journal of Nanomanufacturing, 7. pp. 371-382. ISSN 1746-9392

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Abstract

Zinc oxide (ZnO) thin films were deposited at high rates ( > 50 nm min-1) using a unique technique known as high target utilisation sputtering (HiTUS). The films obtained possess good crystallographic orientation, low surface roughness, very low stress and excellent piezoelectric properties. We have utilised the films to develop highly sensitive biosensors based on thickness longitudinal mode (TLM) thin film bulk acoustic resonators (FBARs). The FBARs have the fundamental TLM at a frequency near 1.5 GHz and quality factor Q higher than 1,000, which is one of the largest values ever reported for ZnO-based FBARs. Bovine Serum Albumin (BSA) solutions with different concentrations were placed on the top of different sets of identical FBARs and their responses to mass-loading from physically adsorbed protein coatings were investigated. These resonators demonstrated a high sensitivity and thus have a great potential as gravimetric sensors for biomedical applications. © 2011 Inderscience Enterprises Ltd.

Item Type: Article
Uncontrolled Keywords: Biosensors FBAR Film bulk acoustic resonator High target utilisation sputtering HiTUS Sputtering Zinc oxide ZnO
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:05
Last Modified: 08 Dec 2014 21:45
DOI: 10.1504/IJNM.2011.042478