Lee, C-H and Sazonov, A and Nathan, A (2005) High mobility N-channel and P-channel nanocrystalline silicon thin-film transistors. Technical Digest - International Electron Devices Meeting, IEDM, 2005. pp. 915-918. ISSN 0163-1918Full text not available from this repository.
We report high hole and electron mobilities in nanocrystalline silicon (nc-Si:H) top-gate staggered thin-film transistors (TFTs) fabricated by direct plasma-enhanced chemical vapor deposition (PECVD) at 260°C. The n-channel nc-Si:H TFT with n+ nc-Si:H ohmic contacts shows a field-effect electron mobility (μnFE) of 130 cm2/Vs, which increases to 150 cm2/Vs with Cr-silicide contacts, along with a field-effect hole mobility (μhFE) of 25 cm2/Vs. To the best of our knowledge, the hole and electron mobilities reported here are the highest achieved to date using direct PECVD. © 2005 IEEE.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:20|
|Last Modified:||08 Dec 2014 02:40|