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High mobility N-channel and P-channel nanocrystalline silicon thin-film transistors

Lee, CH and Sazonov, A and Nathan, A and Nathan, A (2005) High mobility N-channel and P-channel nanocrystalline silicon thin-film transistors. Technical Digest - International Electron Devices Meeting, IEDM, 2005. pp. 915-918. ISSN 0163-1918

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Abstract

We report high hole and electron mobilities in nanocrystalline silicon (nc-Si:H) top-gate staggered thin-film transistors (TFTs) fabricated by direct plasma-enhanced chemical vapor deposition (PECVD) at 260°C. The n-channel nc-Si:H TFT with n+ nc-Si:H ohmic contacts shows a field-effect electron mobility (μnFE) of 130 cm2/Vs, which increases to 150 cm2/Vs with Cr-silicide contacts, along with a field-effect hole mobility (μhFE) of 25 cm2/Vs. To the best of our knowledge, the hole and electron mobilities reported here are the highest achieved to date using direct PECVD. © 2005 IEEE.

Item Type: Article
Subjects: UNSPECIFIED
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Depositing User: Cron job
Date Deposited: 16 Jul 2015 14:10
Last Modified: 03 Aug 2015 04:47
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