Chu, DP and Peeters, FM and Kolodinski, S and Roca, E (1996) Theoretical investigation of CoSi<inf>2</inf>/Si<inf>1-x</inf>Ge<inf>x</inf>detectors: Influence of a Si tunneling barrier on the electro-optical characteristics. Journal of Applied Physics, 79. pp. 1151-1156. ISSN 0021-8979
Full text not available from this repository.Abstract
We present a theoretical investigation of the influence of a non-reacted Si layer on the transport and optical properties of CoSi 2 /Si 1-x Ge x Schottky barrier diodes grown from Co/Si/Si 1-x Ge x systems. The presence of this layer reduces the effect of the lowering of the Schottky barrier height which would be expected in a CoSi 2 /Si 1-x Ge x . However, due to the small thickness of this Si layer, the charge carriers are able to tunnel through it. This tunneling process allows for a significant lowering of the Schottky barrier height and therefore an extension of the detection regime into the infrared. © 1996 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Photonics |
| Depositing User: | Cron Job |
| Date Deposited: | 17 Jul 2017 19:24 |
| Last Modified: | 22 May 2018 07:48 |
| DOI: |
