Xia, M and Thompson, MG and Penty, RV and White, IH (2011) External-cavity mode-locked quantum-dot laser diodes for low repetition rate, sub-picosecond pulse generation. IEEE Journal on Selected Topics in Quantum Electronics, 17. pp. 1272-1279. ISSN 1077-260XFull text not available from this repository.
This paper presents an investigation of the mode-locking performance of a two-section external-cavity mode-locked InGaAs quantum-dot laser diode, focusing on repetition rate, pulse duration and pulse energy. The lowest repetition rate to-date of any passively mode-locked semiconductor laser diode is demonstrated (310 MHz) and a restriction on the pulse energy (at 0.4 pJ) for the shortest pulse durations is identified. Fundamental mode-locking from 310 MHz to 1.1 GHz was investigated, and harmonic mode-locking was achieved up to a repetition rate of 4.4 GHz. Fourier transform limited subpicosecond pulse generation was realized through implementation of an intra-cavity glass etalon, and pulse durations from 930fs to 8.3ps were demonstrated for a repetition rate of 1 GHz. For all investigations, mode-locking with the shortest pulse durations yielded constant pulse energies of ∼0.4 pJ, revealing an independence of the pulse energy on all the mode-locking parameters investigated (cavity configuration, driving conditions, pulse duration, repetition rate, and output power). © 2011 IEEE.
|Uncontrolled Keywords:||Mode-locking optical pulse generation quantum-dot semiconductor lasers|
|Divisions:||Div B > Photonics|
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 23:01|
|Last Modified:||05 Feb 2015 07:33|