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Ultrafast sputtered ZnO thin films with high k<inf>T</inf> for acousticwave device applications

Garcia-Gancedo, L and Pedros, J and Flewitt, AJ and Milne, WI and Ashley, GM and Luo, J and Ford, CJB (2010) Ultrafast sputtered ZnO thin films with high k<inf>T</inf> for acousticwave device applications. In: UNSPECIFIED pp. 1064-1067..

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The fabrication of high frequency acoustic wave devices requires thedevelopment of thin films of piezoelectric materials with improved morphologicaland electro-acoustical properties. In particular, the crystalline orientationof the films, surface morphology, film stress and electrical resistivity are keyissues for the piezoelectric response. In the work reported here, ZnO thinfilms were deposited at high rates (>50 nm/min) using a novel process knownas the High Target Utilisation Sputtering (HiTUS). The films deposited possessexcellent crystallographic orientation, high resistivity (>10 ωm), and exhibit surface roughness and film stress one order of magnitudelower than films grown with standard magnetron sputtering. The electromechanicalcoupling coefficient of the films, k , was precisely calculated byimplementing the resonant spectrum method, and was found to be at least 6%higher than any previously reported k of magnetron sputtered filmsto the Authors' knowledge. The low film stress of the film is deemed as one ofthe most important factors responsible for the high k valueobtained. © 2010 IEEE. 9 T T T

Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:30
Last Modified: 13 Apr 2021 08:22
DOI: 10.1109/ULTSYM.2010.5935455