Tan, MLP and Amaratunga, GAJ (2011) Performance prediction of graphene nanoribbon and carbon nanotube transistors. AIP Conference Proceedings, 1341. pp. 365-369. ISSN 0094-243XFull text not available from this repository.
Carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) field-effect transistor (FET) can be the basis for a quasi-one- dimensional (Q1D) transistor technology. Recent experiments show that the on-off ratio for GNR devices can be improved to level exploration of transistor action is justified. Here we use the tight-binding energy dipersion approximation, to assess the performance of semiconducting CNT and GNR is qualitatively in terms of drain current drive strength, bandgap and density of states for a specified device. By reducing the maximum conductance 4e2/h by half, we observed that our model has a particularly good fit with 50 nm channel single walled carbon nanotube (SWCNT) experimental data. Given the same bandgap, CNTs outperform GNRs due to valley degeneracy. Nevertheless, the variation of the device contacts will decide which transistor will exhibit better conductivity and thus higher ON currents. © 2011 American Institute of Physics.
|Uncontrolled Keywords:||carbon nanotube conductance Device modeling graphene subthreshold swing|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron job|
|Date Deposited:||16 Jul 2015 14:11|
|Last Modified:||30 Nov 2015 16:41|