Guo, X and Williams, KA and Williams, KA and Olle, V and Wonfor, A and Penty, RV and White, IH (2011) Theoretical model for dicke superradiance in a semiconductor laser device. IEEE Photonics Technology Letters, 23. pp. 1817-1819. ISSN 1041-1135Full text not available from this repository.
A theoretical model for Dicke superradiance (SR) in diode lasers is proposed using the travelling wave method with a spatially resolved absorber and spectrally resolved gain. The role of electrode configuration and optical bandwidth are compared and contrasted as a route to enhance femtosecond pulse power. While pulse duration can be significantly reduced through careful absorber length specification, stability is degraded. However an increased spectral gain bandwidth of up to 150 nm is predicted to allow pulsewidth reductions of down to 10 fs and over 500-W peak power without further degradation in pulse stability. © 2011 IEEE.
|Uncontrolled Keywords:||Semiconductor device modeling short pulse generation spontaneous emission|
|Divisions:||Div B > Photonics|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||16 Jul 2015 13:12|
|Last Modified:||31 Aug 2015 02:49|