Nawawi, A and Tseng, KJ and Rusli, R and Amaratunga, GAJ (2011) Switching characteristics of diamond-based m-i-p+ diodes in power electronic applications. IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings. pp. 2676-2680.Full text not available from this repository.
Modeling and numerical analysis of diamond m-i-p+ diode have been performed for static and transient analysis using TCAD Sentaurus platform. The simulation results are compared with experimental measurements. Prediction of transient turn-off characteristics of diamond m-i-p+ diode at high temperature is performed for the first time. It was found that unlike conventional Si diode, peak reverse current in diamond m-i-p+ diode reduces with increasing temperature while on-state voltage drop increases. © 2011 IEEE.
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 23:05|
|Last Modified:||05 Feb 2015 01:23|