CUED Publications database

Switching characteristics of diamond-based m-i-p+ diodes in power electronic applications

Nawawi, A and Tseng, KJ and Rusli, R and Amaratunga, GAJ (2011) Switching characteristics of diamond-based m-i-p+ diodes in power electronic applications. IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings. pp. 2676-2680.

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Abstract

Modeling and numerical analysis of diamond m-i-p+ diode have been performed for static and transient analysis using TCAD Sentaurus platform. The simulation results are compared with experimental measurements. Prediction of transient turn-off characteristics of diamond m-i-p+ diode at high temperature is performed for the first time. It was found that unlike conventional Si diode, peak reverse current in diamond m-i-p+ diode reduces with increasing temperature while on-state voltage drop increases. © 2011 IEEE.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:27
Last Modified: 28 Nov 2014 19:06
DOI: 10.1109/ECCE.2011.6064127